Bibliography

Journal Article

Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE

Vaniš Jan, Zelinka Jiří, Malina Václav, Henini M., Pangrác Jiří, Melichar Karel, Hulicius Eduard, Šroubek Filip, Walachová Jarmila

: Microelectronics Journal vol.40, 3 (2009), p. 496-498

: CEZ:AV0Z20670512

: CEZ:AV0Z10100521

: CEZ:AV0Z10750506

: GA202/05/0242, GA ČR

: quantum dots, ballistic transport, semiconductor heterojunction

: 10.1016/j.mejo.2008.06.054

(eng): Self-assembled InAs quantum dots (SAQDs) in GaAs/GaAlAs structures grown by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) of similar size was examined by ballistic electron emission spectroscopy. Ballistic current-voltage characteristics through the QD in the voltage range from 0.55 to 0.9 V (range where the presence of resonance states of QD is expected) with its derivative (the derivation of the spectroscopic characteristics represents quantum levels in the QD) are given. Differences in the intensities and sharpnesses of the QD levels for MBE and MOVPE grown QDs are observed.

: BM